Vacuum Deposition Equipment

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Vacuum Deposition Equipment
SEC-22C

Standard model of metal thin film deposition equipment

Electrode film and oxide film can be formed on φ4inch and φ6inch wafers. The incident angle of the deposited material wafer is configured to be vertical so that it can correspond to the lift-off process.

Applications

Electrode film formation of various electronic parts
Electrode formation corresponding to lift-off process
Oxide film formation such as protective film application

Features

  1. 1. High-speed exhaust 20 minutes to 4.0 x 10-4 Pa
  2. 2. Realized film thickness distribution of ± 1.0% or less (φ4 inch wafer surface)
  3. 3. Perpendicular incidence of deposition materials suitable for lift-off applications is possible. Incident angle ≦5 degrees at TS1100mm (φ 6 inches))
  4. 4. High-precision dome for more stable incidence angle in the substrate dome.
  5. 5. Able to form a film on resist pattern without damage by low temperature deposition process
  6. 6. Equipped with 4 types of correction plates, it is possible to adjust the film thickness distribution of 4 materials.
  7. 7. Realized high rate of Al deposition. (3 times that of our previous model)
  8. 8. Recipe setting management and acquisition of logging are possible.
  9. 9. The mounting board has a structure that can be maintained with minimal replacement work.
  10. 10. Cleaning treatment before film formation is possible by installing an ion source (optional). Effective for removal of natural oxide film, removal of organic matter, surface modification, etc.
  11. 11. Assist vapor deposition during film formation is possible by installing an ion source (optional). Effective for improving adhesion, controlling stress, controlling film quality, etc.

Options

Equipped with a substrate cleaning mechanism〔Ion source, Bombard〕/ Substrate cooling mechanism / Planetary jig / T/S=700mm・900mm

Specifications

Exhaust Pump CRYO+DRP+MBP
Installation Dimensions W2,500mm×D4,300mm×H2,800mm
Weight 3,100kg
Power Supply Capacity Equipment proper:200V(Φ3)/Approx.40kVA(115A)
Vapor source:200V(Φ3)/Approx.25kVA(73A)
Product catalog