Ion source for Etching
IGF Series
IGF-201
IGF-001
Ideal for etching of individual devices
By emitting various ion beams to a device from a small ion source and combining it with a shutter, individual etching is possible.
Applications
Individual etching of piezoelectric devices (crystal oscillator, SAW filter etc.), wafer planarization etc.
Features
- IGF-001：Beam diameter: approx. φ5mm
IGF-201：Beam diameter: approx. 5mm×L100mm